Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors

Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1337

終了ページ:

1340

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors Danielsson, E., Zetterling, C.-M., OEstling, M., Forsberg, U., Janzen, E. Trans Tech Publications	7 国際会議録 Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices Lee, H.S., Domeij, M., Zetterling, C.M., Ostling, M., Lu, J. Trans Tech Publications
2 国際会議録 Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States Domeij, M., Danielsson, E., Lee, H. S., Zetterling, C. M., Ostling, M. Trans Tech Publications	8 国際会議録 Extrinsic Base Design of SiC Bipolar Transistors Danielsson, E., Domeij, M., Zetterling, C.M., Oestling, M., Schoner, A. Trans Tech Publications
3 国際会議録 A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors K.G.P. Eriksson, M. Domeij, H.S. Lee, C.M. Zetterling, M. Östling Trans Tech Publications	9 国際会議録 Modification of Etched Junction Termination Extension for the High Voltage 4H-SiC Power Devices H. Elahipanah, A. Salemi, C.M. Zetterling, M. Östling Trans Tech Publications
4 国際会議録 Electro-Thermal Simulations and Measurement of Silicon Carbide Bipolar Transistors Liu, W., Danielsson, E., Zetterling, C.-M., Ostling, M. Trans Tech Publications	10 国際会議録 Investigation of the Breakdown Voltage in High Voltage 4H-SiC BJT with Respect to Oxide and Interface Charges A. Salemi, H. Elahipanah, C.M. Zetterling, M. Östling Trans Tech Publications
5 国際会議録 Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors Koo, S.-M., Lee, S.-K., Zetterling, C.-M., Ostling, M., Forsberg, U., Janzen, E. Trans Tech Publications	11 国際会議録 A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base Layer Danielsson, E., Domeij, M., Lee, H. S., Zetterling, C. M., Ostling, M., Schoner, A., Hallin, C. Trans Tech Publications
6 国際会議録 Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs Koo, S.-M., Domeij, M., Zetterling, C.-M., Ostling, M., Forsberg, U., Janzen, E. Trans Tech Publications	12 国際会議録 Electrical Characteristics of 4H-SiC BJTs at Elevated Temperatures Lee, H. S., Domeij, M., Danielsson, E., Zetterling, C. M., Ostling, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12