TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate

TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate

著者名:

Adachi, K.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

1085

終了ページ:

1088

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon Gate Adachi, K., Johnson, C.M., Arai, K., Fukuda, K., Harada, S., Shinohe, T. Trans Tech Publications	7 国際会議録 Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Adachi, K., Fukuda, K., Arai, K. Trans Tech Publications
2 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	8 国際会議録 Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Adachi, K., Fukuda, K., Arai, Kazuo Trans Tech Publications
3 国際会議録 Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications	9 国際会議録 Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping Hatakeyama, T., Watanabe, T., Senzaki, J., Kato, M., Fukuda, K., Shinohe, T., Arai, K. Trans Tech Publications
4 国際会議録 Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications Adachi, K., Johnson, C.M., Ohashi, H., Shinohe, T., Kinoshita, K., Arai, K. Trans Tech Publications	10 国際会議録 Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET Harada, S., Okamoto, M., Yatsuo, T., Fukuda, K., Arai, K. Trans Tech Publications
5 国際会議録 Fabrication of 4H-SiC Double-Epitaxial MOSFETs Harada, S., Okamoto, M., Yatsuo, T., Adachi, K., Suzuki, K., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications	11 国際会議録 4H-SiC p-Channel MOSFETs with Epi-Channel Structure M. Okamoto, T. Yatsuo, K. Fukuda, H. Okumura, K. Arai Trans Tech Publications
6 国際会議録 Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face S. Harada, M. Kato, T. Yatsuo, K. Fukuda, K. Arai Trans Tech Publications	12 国際会議録 Super-Junction Device Forward Characteristics and Switched Power Limitations Adachi, K., Johnson, C.M., Ohashi, H., Shinohe, T., Kinoshita, K., Arai, K. Trans Tech Publications

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