Titanium-Based Ohmic Contact on p-Type 4H-SiC

Titanium-Based Ohmic Contact on p-Type 4H-SiC

著者名:

Jung, K.H.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

913

終了ページ:

916

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Titanium-Based Ohmic Contact on p-Type 4H-SiC Jung, K.H., Cho, N.I., Lee, J.H., Yang, S.J., Kim, C.K., Lee, B.-T., Rim, K.H., Kim, N.-K., Kim, E.-D. Trans Tech Publications	7 国際会議録 On the Formation of Ni-Based Ohmic Contacts to n-Type 4H-SiC A.V. Kuchuk, V.P. Kladko, A. Piotrowska, R. Ratajczak, R. Jakiela Trans Tech Publications
2 国際会議録 Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC Han, S. Y., Kim, N.-K., Kim, E.-D., Lee, J.-L. Trans Tech Publications	8 国際会議録 Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC B. Krishnan, S.P. Kotamraju, G. Melnychuk, N. Merrett, Y. Koshka Trans Tech Publications
3 国際会議録 Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC Han, S.Y., Kim, N.-K., Kim, E.-D., Lee, J.-L. Trans Tech Publications	9 国際会議録 The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC A.V. Kuchuk, V.P. Kladko, K. Gołaszewska, M. Guziewicz, M. Wzorek Trans Tech Publications
4 国際会議録 Effects of Substrate Temperature on the Electrical and the Optical Properties of N-Type ZnO/P-Type 4H-SiC J.C. Jung, J.H. Kim, K.M. Do, B.M. Moon, S.J. Joo Trans Tech Publications	10 国際会議録 Titanium Tungsten (TiW) for Ohmic Contacts to n-and p-Type 4H-SiC Lee, S.-K., Zetterling, C.-M., Oestling, M. Materials Research Society
5 国際会議録 Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures K.H. Kim, Y.H. Kang, J.H. Lee, E.S. Jung, I.H. Kang Trans Tech Publications	11 国際会議録 Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed under Various Conditions Vassilevski, K. V., Zekentes, K., Constantinidis, G., Papanicolaou, N., Nikitina, I. P., Babanin, A. I. Trans Tech Publications
6 国際会議録 High-performance 193-nm photoresist materials based on ROMA polymers: sub-90-nm contact hole application with resist reflow Joo, H.S., Seo, D.C., Kim, C.M., Lim, Y.T., Cho, S.D., Lee, J.B., Song, J.Y., Kim, K.M., Park, J.H., Jung, J.C., Shin, … SPIE - The International Society of Optical Engineering	12 国際会議録 Surface Modification of 3C-SiC for Good Ni Ohmic Contact Noh, J.I., Lee, S.H., Nahm, K.S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12