Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

著者名:

Phelps, G.J.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

855

終了ページ:

858

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Enhanced Dopant Diffusion Effects in 4H Silicon Carbide Phelps, G.J., Wright, N.G., Chester, E.G., Johnson, C.M., O'Neill, A.G., Ortolland, S., Horsfall, A.B., Vassilevski, K., … Trans Tech Publications	7 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications
2 国際会議録 Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications	8 国際会議録 Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology Wright, N.G., Johnson, C.M., O'Neill, A.G., Horsfall, A., Phelps, G.J., Adachi, K., Knights, A.P., Ortolland, S., … Materials Research Society
3 国際会議録 Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications	9 国際会議録 Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown Vassilevski, K.V., Nikitina, I.P., Bhatnagar, P., Horsfall, A.B., Wright, N.G., O'Neill, A.G., Uren, M.J., Hilton, K., … Trans Tech Publications
4 国際会議録 Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET Bhatnagar, P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O'Neill, A.G. Trans Tech Publications	10 国際会議録 Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes Blasciuc-Dimitriu, C., Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications
5 国際会議録 Optimisation of a 4H-SiC Enhancement Mode Power JFET Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	11 国際会議録 Silicon Carbide Static Induction Transistor with Implanted Buried Gate K.V. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, A.G. O'Neill Trans Tech Publications
6 国際会議録 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	12 国際会議録 Low Voltage Silicon Carbide Zener Diode Vassilevski, K.V., Zekentes, K., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12