Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC | 東京工業大学附属図書館文献データベース

Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

561

終了ページ:

564

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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1 国際会議録 Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC Aradi, B., Gali, A., Deak, P., Son, N.T., Janzen, E. Trans Tech Publications	7 国際会議録 Calculation of Hyperfine Constants of Defects in 4H-SiC Gali, A., Deak, P., Son, N.T., Janzen, E., von Bardeleben, H.J., Monge, J.-L. Trans Tech Publications
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