EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

著者名:

Mizuochi, N.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

497

終了ページ:

500

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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1 国際会議録 EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC Mizuochi, N., Isoya, J., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H. Trans Tech Publications	7 国際会議録 Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4E-SiC Umeda, T., Son, N.T., Isoya, J., Morishita, N., Ohshima, T., Itoh, H., Janzen, E. Trans Tech Publications
2 国際会議録 Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya Trans Tech Publications	8 国際会議録 Shallow P Donors in 3C-, 4H- and 6H-SiC Isoya, J., Katagiri, M., Umeda, T., Son, N.T., Henry, A., Gali, A., Morishita, N., Ohshima, T., Itoh, H., Janzen, E. Trans Tech Publications
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