Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers

著者名:

Skromme, B.J.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

455

終了ページ:

458

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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1 国際会議録 Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers Skromme, B.J., Palle, K., Poweleit, C.D., Bryant, L.R., Vetter, W.M., Dudley, M., Moore, K., Gehoski, T. Trans Tech Publications	7 国際会議録 Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes Wang, Y., Chen, L., Mikhov, M.K., Samson, G., Skromme, B.J. Trans Tech Publications
2 国際会議録 Effects of Structural Defects on Diode Properties in 4H-SiC Skromme, B.J., Palle, K.C., Mikhov, M.K., Meidia, H., Mahajan, S., Huang, X.R., Vetter, W.M., Dudley, M., Moore, K., … Materials Research Society	8 国際会議録 Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer Hui Chen, Balaji Raghothamachar, William Vetter, Michael Dudley, Y. Wang, B. J. Skromme Materials Research Society
3 国際会議録 Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates Skromme, B.J., Mikhov, M.K., Chen, L., Samson, G., Wang, R., Li, C., Bhat, I. Trans Tech Publications	9 国際会議録 Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation Wang, Y., Mikhov, M.K., Skromme, B.J. Trans Tech Publications
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