Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

著者名:

Wagner, G.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

207

終了ページ:

210

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

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1 国際会議録 Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Wagner, G., Leitenberger, W., Irmscher, K., Schmid, F., Laube, M., Pensl, G. Trans Tech Publications	7 国際会議録 Electrical and Optical Characterization of SiC Pensl, G., Schmid, F., Ciobanu, F., Laube, M., Reshanov, S.A., Schulze, N., Semmelroth, K., Nagasawa, H., Schoner, A., … Trans Tech Publications
2 国際会議録 Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor Wagner, G., Irmscher, K. Trans Tech Publications	8 国際会議録 Characterization of thick 4H-SiC hot-wall CVD layers Paisley, M. J., Irvine, K. G., Kordina, O., Singh, R., Palmour, J. W., Carter, C. H. Jr. MRS-Materials Research Society
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