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Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition

著者名:
掲載資料名:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
シリーズ名:
Materials science forum
シリーズ巻号:
389-393
発行年:
2002
開始ページ:
183
終了ページ:
186
総ページ数:
4
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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