Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

171

終了ページ:

174

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	7 国際会議録 Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density Tsuchida, H., Kamata, I., Izumi, S., Tawara, T., Jikimoto, T., Miyanagi, T., Nakamura, T., Izumi, K. Materials Research Society
2 国際会議録 Growth of Thick 4H-SiC Epilayers in a Vertical Radiant-Heating Reactor Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Materials Research Society	8 国際会議録 Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate Tsuchida, H., Tsuji, T., Kamata, I., Jikimoto, T., Fujisawa, H., Ogino, S., Izumi, K. Trans Tech Publications
3 国際会議録 A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications	9 国際会議録 Growth and Characterization of the 4H-SiC Epilayers on Substrates with Different Off-Cut Directions Tsuchida, H., Kamata, I., Izumi, S., Tawara, T., Izumi, K. Trans Tech Publications
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5 国際会議録 Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications	11 国際会議録 Conditions for Micropipe Dissociation by 4H-SiC CVD Growth Kamata, I., Tsuchida, H., Jikimoto, T., Miyanagi, T., Izumi, K. Trans Tech Publications
6 国際会議録 LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	12 国際会議録 In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces Jikimoto, T., Tsuchida, H., Kamata, I., Izumi, K. Trans Tech Publications

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