On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk Crystals
- 著者名:
- 掲載資料名:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 389-393
- 発行年:
- 2002
- 開始ページ:
- 139
- 終了ページ:
- 142
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Trans Tech Publications |
2
国際会議録
Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth
Trans Tech Publications |
Trans Tech Publications |
3
国際会議録
Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Trans Tech Publications |
Trans Tech Publications |
4
国際会議録
Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal Growth
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS-Materials Research Society |
Trans Tech Publications |
12
国際会議録
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
Trans Tech Publications |