Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method

Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method

著者名:

Straubinger, T.L.

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

131

終了ページ:

134

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013331
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

1 国際会議録 Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method Straubinger, T.L., Bickermann, M., Rasp, M., Weingartner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	7 国際会議録 Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging Wellmann, P.J., Herro, Z., Straubinger, T.L., Winnacker, A. Trans Tech Publications
2 国際会議録 Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC Weingaertner, R., Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Wellmann, P.J., Winnacker, A. Trans Tech Publications	8 国際会議録 Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications
3 国際会議録 Study of Boron Incorporation During PVT Growth of p-type SiC Crystals Bickermann, M., Hofmann, D., Rasp, M., Straubinger, T.L., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	9 国際会議録 Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process Wellmann, P.J., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T.L., Winnacker, A. Trans Tech Publications
4 国際会議録 Stability Criteria for 4H-SiC Bulk Growth Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications	10 国際会議録 PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals Rasp, M., Straubinger, T.L., Schmitt, E., Bickermann, M., Reshanov, S., Sadowski, H. Trans Tech Publications
5 国際会議録 Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow Straubinger, T.L., Wellmann, P.J., Winnacker, A. Trans Tech Publications	11 国際会議録 Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation Wellmann, P. J., Bickermann, M., Hofmann, D., Kadinski, L., Selder, M., Straubinger, T. L., Winnacker, A. Trans Tech Publications
6 国際会議録 Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging Wellmann, P.J., Herro, Z., Straubinger, T.L., Winnacker, A. Trans Tech Publications	12 国際会議録 On-line monitoring of PVT SiC bulk crystal growth using digital X-ray imaging Wellmann, P. J., Bickermann, M., Grau, M., Hofmann, D., Straubinger, T. L., Winnacker, A. MRS-Materials Research Society

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