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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

著者名:
Wang, S.
Sanchez, E.K.
Kopec, A.
Poplawski, S.
Ware, R.
Holmes, S.
Balkas, C.M.
Timmerman, A.G.
さらに 3 件
掲載資料名:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
シリーズ名:
Materials science forum
シリーズ巻号:
389-393
発行年:
2002
開始ページ:
35
終了ページ:
38
総ページ数:
4
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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