A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects
- 著者名:
Lazar, M. Raynaud, C. Planson, D. Locatelli, M.-L. Isoird, K. Ottaviani, L. Chante, J.P. Nipoti, R. Poggi, A. Cardinali, G. - 掲載資料名:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 389-393
- 発行年:
- 2002
- 開始ページ:
- 827
- 終了ページ:
- 830
- 総ページ数:
- 4
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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3
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The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study
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