Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

著者名:

掲載資料名:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

シリーズ名:

Materials science forum

シリーズ巻号:

389-393

発行年:

2002

開始ページ:

783

終了ページ:

786

総ページ数:

4

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013330
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2001
会議開催地:	Tsukuba, Japan
会議開催年:	2001.10.28-2001.11.02

類似資料:

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2 国際会議録 Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001) Negoro, Y., Kimoto, T., Matsunami, H. Materials Research Society	8 国際会議録 Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H., Schmid, F., Pensl, G. Trans Tech Publications
3 国際会議録 Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics Miyamoto, N., Saitoh, A., Kimoto, T., Matsunami, H., Hishida, Y., Watanabe, M. Trans Tech Publications
4 国際会議録 High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications
5 国際会議録 High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	11 国際会議録 Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications
6 国際会議録 Technological Aspects of Ion Implantation in SiC Device Processes Negoro, Y., Kimoto, T., Matsunami, H. Trans Tech Publications	12 国際会議録 Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society

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