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Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System

著者名:
Wagner, G.
Leitenberger, W.
Irmscher, K.
Schmid, F.
Laube, M.
Pensl, G.
さらに 1 件
掲載資料名:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
シリーズ名:
Materials science forum
シリーズ巻号:
389-393
発行年:
2002
開始ページ:
207
終了ページ:
210
総ページ数:
4
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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