Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
- 著者名:
Banc, C. Royet, A.S. Ouisse, T. Bano, E. Noblanc, O. Brylinski, C. - 掲載資料名:
- Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 353-356
- 発行年:
- 2001
- 開始ページ:
- 703
- 終了ページ:
- 706
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498734 [0878498737]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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10
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Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization
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