Precipitate Formation in Heavily Al-Doped 4H-SiC Layers

Precipitate Formation in Heavily Al-Doped 4H-SiC Layers

著者名:

Linnarsson, M.K.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

583

終了ページ:

586

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Doping of Silicon Carbide by Ion Implantation Svensson, B.G., Hallen, A., Linnarsson, M.K., Kuznetsov, A.Yu., Janson, M.S, Aberg, D., Oesterman, J., Persson, P.O.A., … Trans Tech Publications	7 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M.S., Janzen, E., Svensson, B.G. Trans Tech Publications
2 国際会議録 Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC Linnarsson,M.K., Janson,M., Schoner,A., Nordell,N., Karlsson,S., Svensson,B.G. Trans Tech Publications	8 国際会議録 Transmission Electron Microscopy Investigation of Defects in B-Implanted 6H-SiC Persson,P.O.A., Wahab,Q., Hultman,L., Nordell,N., Schoner,A., Rottner,K., Olsson,E., Linnarsson,M.K. Trans Tech Publications
3 国際会議録 Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC Janson, M.S, Hallen, A., Linnarsson, M.K., Nordell, N., Karlsson, S., Svensson, B.G. Trans Tech Publications	9 国際会議録 Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC Linnarsson, M. K., Spetz, A. Ll., Janson, M. S., Ekedahl, L. G., Karlsson, S., Schoner, A., Lundstrom, I., Svensson, B. … Trans Tech Publications
4 国際会議録 Aluminum and Boron Diffusion in 4H-SiC Linnarsson, M.K., Janson, M.S., Schoner, A., Svensson, B.G. Materials Research Society	10 国際会議録 Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC Persson, P.O.A., Hultman, L. Trans Tech Publications
5 国際会議録 Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC Linnarsson, M.K., Janson, M.S., Shoner, A., Konstantinov, A., Svensson, B.G. Trans Tech Publications	11 国際会議録 Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC Janson, M., Linnarsson, M. K., Hallen, A., Svensson, B. G. MRS - Materials Research Society
6 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M., Janzen, E., Svensson, B.G. Trans Tech Publications	12 国際会議録 Growth of δ-Doped SiC Epitaxial Layers Karlsson, S., Adas, C., Konstantinov, A., Linnarsson, M.K. Trans Tech Publications

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