High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
- 著者名:
Lazar, M. Ottaviani, L. Locatelli, M.L. Raynaud, C. Planson, D. Morvan, E. Godignon, P. Skorupa, W. Chante, J.P. - 掲載資料名:
- Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 353-356
- 発行年:
- 2001
- 開始ページ:
- 571
- 終了ページ:
- 574
- 総ページ数:
- 4
- 出版情報:
- Uetikon-Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498734 [0878498737]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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