Recent Progress in SiC Epitaxial Growth and Device Processing Technology

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

著者名:

Kimoto, T.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

543

終了ページ:

548

総ページ数:

6

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society	7 国際会議録 Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications
2 国際会議録 Technological Aspects of Ion Implantation in SiC Device Processes Negoro, Y., Kimoto, T., Matsunami, H. Trans Tech Publications	8 国際会議録 High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications
4 国際会議録 Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	10 国際会議録 Recent Achievements and Future Challenges in SiC Homoepitaxial Growth Kimoto, T., Nakazawa, S., Fujihira, K., Hirao, T., Nakamura, S., Chen, Y, Hashimoto, K., Matsunami, H. Trans Tech Publications
5 国際会議録 Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	11 国際会議録 Recent Achievements and Future Challenges in SiC Homoepitaxial Growth Kimoto, T., Nakazawa, S., Fujihira, K., Hirao, T., Nakamura, S., Chen, Y., Hashimoto, K., Matsunami, H. Trans Tech Publications
6 国際会議録 Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	12 国際会議録 Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Kimoto, T., Danno, K., Fujihira, K., Shiomi, H., Matsunami, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12