EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC

EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC

著者名:

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

513

終了ページ:

516

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V von Bardeleben, H.J., Cantin, J.L., Reshanov, S.A., Rastegaev, V.P. Trans Tech Publications	7 国際会議録 EPR Study of the Defects in Porous Si/SiO x N y and Si0.80Ge0.20/SiGeO2 Cantin, J.L., Schoisswohl, M., von Bardeleben, H.J., Morazzani, V., Ganem, J.-J., Trimaille, I. Electrochemical Society
2 国際会議録 EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC von Bardeleben, H.J., Cantin, J.L., Mynbaeva, M., Saddow, S.E. Trans Tech Publications	8 国際会議録 Phosphorus-Related Shallow and Deep Defects in 6H-SiC Baranov, P.G., Ilyin, I.V., Mokhov, E.N., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications
3 国際会議録 Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study Cantin, J.L., von Bardeleben, H.J. Trans Tech Publications	9 国際会議録 Electron Paramagnetic Resonance Study of Defects at Nitric Oxide Treated Si/SiO2 and Si/Si3N4 Interfaces Cantin, J.L., von Bardeleben, H.-J. Electrochemical Society
4 国際会議録 Microscopic Structure and Electrical Activity of 4H-SiC/SiO2 Interface Defects : an EPR Study of Oxidized Porous SiC von Bardeleben, H.J., Cantin, J.L., Shishkin, Y., Devaty, R.P., Choyke, W.J. Trans Tech Publications	10 国際会議録 RBS-Channeling and EPR Studies of Damage in 2 MeV Al2+_Implanted 6H-SiC Substrates Morilla, Y., Garcia Lopez, J., Battistig, G., Cantin, J. L., Cheang-Wong, J. C., Bardeleben, H. J. von, Respaldiza, M. … Trans Tech Publications
5 国際会議録 Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold von Bardeleben, H.J., Cantin, J.L., Baranov, P.G., Mokhov, E.N. Trans Tech Publications	11 国際会議録 A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications
6 国際会議録 EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC von Bardeleben, H.J., Cantin, J.L., Mynbaeva, M., Saddow, S.E., Shishkin, Y., Devaty, R.P., Choyke, W.J. Electrochemical Society	12 国際会議録 Interface Defects in n-Type 3C-SiC/SiO2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystals Bardeleben, H. J. von, Cantin, J. L., Ke, L., Shishkin, Y., Devaty, R. P., Choyke, W. J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12