Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy

Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy

著者名:

Steeds, J.W.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

381

終了ページ:

384

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy Steeds, J.W., Evans, G.A., Furkert, S., Ley, L., Hundhausen, M., Schulz, N., Pensl, G. Trans Tech Publications	7 国際会議録 Electron Irradiation of 4H SiC by TEM: An Optical Study Sridhara, S.G., Persson, P.O.Å., Carlsson, F.H.C., Bergman, J.P., Janzen, E., Evans, G., Steeds, J.W. Materials Research Society
2 国際会議録 The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC J.W. Steeds Trans Tech Publications	8 国際会議録 A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC W. Sullivan, J.W. Steeds Trans Tech Publications
3 国際会議録 Photoluminescence Investigation of Defects Created by Electron Bombardment of 4H-SiC J.W. Steeds Trans Tech Publications	9 国際会議録 Examination of Two P-Type 4H SiC Samples Having Similar Resistivity but Very Different Radiation Damage and Annealing Characteristics J.W. Steeds Trans Tech Publications
4 国際会議録 A Combined Photoluminescence aha Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC Sullivan, W., Steeds, J.W., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications	10 国際会議録 Further Investigation of Silicon Vacancy-Related Luminescence in 4H and 6H SiC Steeds, J.W., Furkert, S., Hayes, J.M., Sullivan, W. Trans Tech Publications
5 国際会議録 Micro-Raman and Photoluminescence Study on n-type 6H-SiC Feng, Z.C., Chua, S.J., Evans, A.G., Steeds, J.W., Williams, K.P.J., Pitt, G.D. Trans Tech Publications	11 国際会議録 Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon Carbide Steeds, J. W., Furkert, S. A., Sullivan, W., Hayes, J. M., Wright, N. G. Trans Tech Publications
6 国際会議録 The Formation of Alphabet Lines in 4H SiC after Low-Energy Electron Irradiation J.W. Steeds Trans Tech Publications	12 国際会議録 Microstructural Characterization Of Sintered Ba(Mg_1/3Ta2/3)O3 Materials By Transmission Electron Microscopy And Convergent Beam Electron Diffraction Steeds, J.W., Lin, I-N. Materials Research Society

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