Modeling of Boron Diffusion in Silicon Carbide

Modeling of Boron Diffusion in Silicon Carbide

著者名:

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

327

終了ページ:

330

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

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2 国際会議録 EQUILIBRIUM CONCENTRATIONS OF INTRINSIC POINT DEFECTS IN SILICON DETERMINED BY ZINC DIFFUSION Bracht, H., Stolwijk, N.A., Mehrer, H. Electrochemical Society	8 国際会議録 Phonon Spectroscopy of Defects Correlated with the Diffusion of Zn into Si Staiger,J., Gross,P., Lassmann,K., Bracht,H., Stolwijk,N.A. Trans Tech Publications
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