Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

著者名:

Tsuchida, H.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

131

終了ページ:

134

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	7 国際会議録 A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications
2 国際会議録 Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements Tsuji, T., Izumi, S., Ueda, A., Fujisawa, H., Ueno, K., Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	8 国際会議録 Fabrication of 3.4kV High Voltage n-Type 4H-SiC Schottky Barrier Diodes Using Thick Epitaxial Layers Tsuji, Takashi, Fujisawa, Hiroyuki, Ogino, Shinji, Tsuchida, Hidekazu, Kamata, Isaho, Jikimoto, Tamotsu, Izumi, Kunikazu Materials Research Society
3 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	9 国際会議録 Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes Fujisawa, H., Tsuji, T., Izumi, S., Ueno, K., Kamata, I., Tsuchida, T., Jikimoto, T., Izumi, K. Trans Tech Publications
4 国際会議録 Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC Epilayers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications	10 国際会議録 Electroluminescence Analysis of Al+ and B+ Implanted pn Diodes Fujisawa, H., Tsuji, T., Izumi, S., Ueno, K., Kamata, I., Tsuchida, T., Jikimoto, T., Izumi, K. Trans Tech Publications
5 国際会議録 Growth of Thick 4H-SiC Epilayers in a Vertical Radiant-Heating Reactor Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Materials Research Society	11 国際会議録 In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC Surfaces Jikimoto, T., Tsuchida, H., Kamata, I., Izumi, K. Trans Tech Publications
6 国際会議録 A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes Kamata, I., Tsuchida, H., Jikimoto, T., Izumi, K. Trans Tech Publications	12 国際会議録 LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers Tsuchida, H., Kamata, I., Jikimoto, T., Izumi, K. Trans Tech Publications

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