Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

著者名:

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

45

終了ページ:

48

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Growth of Phosphorus-Doped 6H-SiC Single Crystals by the Modified Lely Method Semmelroth, K., Schmid, F., Karg, D., Pensl, G., Maier, M., Greulich-Weber, S., Spaeth, J.-M. Trans Tech Publications	7 国際会議録 Impurity Conduction Observed in Al-Doped 6H-SiC Krieger, M., Semmelroth, K., Pensl, G. Trans Tech Publications
2 国際会議録 Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method Sadowski, H., Schulze, N., Frank, T., Laube, M., Pensl, G., Helbig, R. Trans Tech Publications	8 国際会議録 Microstructure of Cubic SiC Grown by the Modified Lely-Method Nerding, M., Semmelroth, K., Pensl, G., Nagasawa, H., Strunk, H.P. Trans Tech Publications
3 国際会議録 Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method Schulze, N., Barrett, D., Weidner, M., Pensl, G. Trans Tech Publications	9 国際会議録 Ionization Energies of Phosphorus Donors in 6H-SiC F. Schmid, K. Semmelroth, M. Krieger, H.B. Weber, G. Pensl Trans Tech Publications
4 国際会議録 Low Temperature Photoluminescence of 13C Enriched SiC-Crystals Grown by the Modified Lely Method Sadowski, H., Peppermuller, C., Schulze, N., Laube, M., Pensl, G., Helbig, R. Trans Tech Publications	10 国際会議録 New Aspects in n-type Doping of SiC with Phosphorus Rauls, E., Gerstmann, U., Greulich-Weber, S., Semmelroth, K., Pensl, G., Haller, E.E. Trans Tech Publications
5 国際会議録 Electrical and Optical Characterization of SiC Pensl, G., Schmid, F., Ciobanu, F., Laube, M., Reshanov, S.A., Schulze, N., Semmelroth, K., Nagasawa, H., Schoner, A., … Trans Tech Publications	11 国際会議録 Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Wagner, G., Leitenberger, W., Irmscher, K., Schmid, F., Laube, M., Pensl, G. Trans Tech Publications
6 国際会議録 Growth of 3C-SiC Bulk Material by the Modified Lely Method Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Puesche, R., Hundhausen, M., Ley, L., Nerding, M., Strunk, H.P. Trans Tech Publications	12 国際会議録 Aluminum Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD System Wagner, G., Leitenberger, W., Irmscher, K., Schmid, F., Laube, M., Pensl, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12