Progress in 4H-SiC Bulk Growth

Progress in 4H-SiC Bulk Growth

著者名:

Anikin, M.

掲載資料名:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

21

終了ページ:

24

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

類似資料:

1 国際会議録 Progress in SiC Bulk Growth Anikin, M., Chaix, O., Pernot, E., Pelissier, B., Pons, M., Pisch, A., Bernard, C., Grosse, P., Faure, C., Grange, Y., … Trans Tech Publications	7 国際会議録 Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals Pernot, E., Anikin, M., Pons, M., Chaix-Pluchery, O., Baillet, F., Matko, I., Madar, R. Trans Tech Publications
2 国際会議録 SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results Moulin, C., Pons, M., Pisch, A., Grosse, P., Faure, C., Basset, A., Basset, G., Passero, A., Billon, T., Pelissier, B., … Trans Tech Publications	8 国際会議録 Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals Pernot, E., Anikin, M., Pons, M., Chaix-Pluchery, O., Baillet, F., Matko, I., Madar, R. Trans Tech Publications
3 国際会議録 Seed Surface Preparation for SiC Sublimation Growth Pelissier, B., Moulin, C., Pernot, E., Anikin, M., Grosse, P., Faure, C., Ferrand, B., Couchaud, M., Basset, G., Madar, … Trans Tech Publications	9 国際会議録 Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography Pernot, E., Neyret, E., Moulin, C., Pernot-Rejmankova, P., Templier, F., Cioccio, L.Di., Billon, T., Madar, R. Trans Tech Publications
4 国際会議録 Free Growth of 4H-SiC by Sublimation Method Dedulle, J.M., Anikin, M., Pons, M., Blanquet, E., Pisch, A., Madar, R., Bernard, C. Trans Tech Publications	10 国際会議録 Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography Pernot, E., Neyret, E., Moulin, C., Pernot-Rejmankova, P., Templier, F., Di Cioccio, L., Billon, T., Madar, R. Trans Tech Publications
5 国際会議録 Numerical Simulation of SiC Boule Growth by Sublimation Madar, R., Pons, M., Dedulle, J. -M., Blanquet, E., Pisch, A., Grosse, P., Faure, C., Anikin, M., Bernard, C. Trans Tech Publications	11 国際会議録 Evaporation Behavior of SiC Powder for Single Crystal Growth - An Experimental Study on Thermodynamics and Kinetics Pisch, A., Ferraria, A. M., Chatillon, C., Blanquet, E., Pons, M., Bemard, C., Anikin, M., Madar, R. Trans Tech Publications
6 国際会議録 Heat and Mass Transfer Simulation of SiC Boule Growth by Sublimation Pons, Michel, Moulin, Cecile, Debulle, Jean-Marc, Pisch, Alexndre, Pelossier, Bernard, Blanquet, Elisabeth, Anikin, … Materials Research Society	12 国際会議録 Growth of AlN and AlN-SiC Solid Solution by Sublimation Method Anikin, M., Chaussende, D., Pernot, E., Chaix-Pluchery, O., Roussel, H., Pons, M., Madar, R. Trans Tech Publications

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