SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

シリーズ名:

Materials science forum

シリーズ巻号:

353-356

発行年:

2001

開始ページ:

7

終了ページ:

10

総ページ数:

4

出版情報:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013315
シリーズID:	PA00000012
会議名:	ECSCRM : European Conference on Silicon Carbide and Related Materials
回次:	2000 : 3rd
会議開催地:	Benediktinerkloster Banz, Germany
会議開催年:	2000.09.00

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2 国際会議録 Seed Surface Preparation for SiC Sublimation Growth Pelissier, B., Moulin, C., Pernot, E., Anikin, M., Grosse, P., Faure, C., Ferrand, B., Couchaud, M., Basset, G., Madar, … Trans Tech Publications	8 国際会議録 Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography Pernot, E., Neyret, E., Moulin, C., Pernot-Rejmankova, P., Templier, F., Cioccio, L.Di., Billon, T., Madar, R. Trans Tech Publications
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4 国際会議録 Numerical Simulation of SiC Boule Growth by Sublimation Madar, R., Pons, M., Dedulle, J. -M., Blanquet, E., Pisch, A., Grosse, P., Faure, C., Anikin, M., Bernard, C. Trans Tech Publications	10 国際会議録 Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals Pernot, E., Anikin, M., Pons, M., Chaix-Pluchery, O., Baillet, F., Matko, I., Madar, R. Trans Tech Publications
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