Potential and Pitfalls of the Diode Characterization Technique for ULSI Device Analysis

Potential and Pitfalls of the Diode Characterization Technique for ULSI Device Analysis

著者名:

掲載資料名:

Analytical and diagnostic techniques for semiconductor materials, devices, and processes : joint proceedings of the symposia on: ALTECH 2003, Analytical Techniques for Semiconductor Materials and Process Characterization IV, Paris, France and the 202nd Meeting of the Electrochemical Society, Diagnostic Techniques for Semiconductor Materials and Devices VI, Salt Lake City, Utah

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5133

発行年:

2003

開始ページ:

386

終了ページ:

395

総ページ数:

10

出版情報:

Pennington, NJ: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819449993 [0819449997]

言語:

英語

請求記号:

P63600/5133

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013121
シリーズID:	PA00000029
会議名:	ALTECH 2003 : Analytical Techniques for Semiconductor Materials and Process Characterization IV ; Meeting of the Electrochemical Society : Diagnostic Techniques for Semiconductor Materials and Devices VI
回次:	2003 : 4th ; 202nd : 6th
会議開催地:	Paris, France ; Salt Lake City, UT, USA
会議開催年:	2003.04.00 ; 2002.10.00

類似資料:

1 国際会議録 Potential and Pitfalls of the Diode Characterization Technique for ULSI Device Analysis Poyai, A., Sitnoen, E., Claeys, C. Electrochemical Society	7 国際会議録 The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies Simoen, E., Claeys, C., Poyai, A. Electrochemical Society
2 国際会議録 Diode Analysis of Deep Submicron CMOS P-Well Implantation Damage Poyai, A., Simoen, E., Claeys, C., Rooyackers, R. Electrochemical Society	8 国際会議録 P-N Junction Diagnostics of the Electrical Epi-Layer Quality: A Feasibility Study Simoen, E., Poyai, A., Claeys, C., Czerwinski, A. Electrochemical Society
3 国際会議録 Impact of the Generation Width on the Lifetime Extraction in Cz Siliconp-n Junction Diodes Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. Electrochemical Society	9 国際会議録 Proton-irradiation effect on the electric-field enhancement of the generation lifetime in shallow P-N junction diodes Poyai, A., Simoen, E., Claeys, C., Hayama, K., Kobayashi, K., Ohyama, H. Electrochemical Society
4 国際会議録 New Method for Accurate Determination of the Electric Field Enhancement in Junctions - Theoretical Model and Applications to STI Diodes With High Fields Czerwinski, A., Simoen, E., Poyai, A., Claeys, C. Electrochemical Society	10 国際会議録 Impact of STI Width and Spacing on the Stress Generation in Deep Submicron CMOS Poyai, A., Rittaporn, I., Simoen, E., Claeys, C., Rooyackers, R. Electrochemical Society
5 国際会議録 Diode Analysis of Silicon Substrate Quality Sitnoen,E., Poyai,A., Claeys,C. SPIE - The International Society for Optical Engineering	11 国際会議録 Impact of Thermal Budget on Junction Leakage in a 0.18 and 0.13 μm CMOS Technology Poyai, A., Simoen, E., Claeys, C., Rooyackers, R., Redolfi, A. Electrochemical Society
6 国際会議録 OPTIMISED DIODE ASSESSMENT OF THE SURFACE AND BULK GENERATION/RECOMBINATION PROPERTIES OF SILICON SUBSTRATE Simoen, E., Poyai, A., Claeys, C., Czerwinski, A., Katcki, J. Electrochemical Society	12 国際会議録 The Potential and Restrictions of Silicon-on-Insulator Technologies for Cryogenic Applications C. Claeys, E. Simoen Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12