Extension of Cr-less PSM to sub 90-nm-node DRAM and logic device
- 著者名:
Lee, J.-H. ( Samsung Electronics Co., Ltd. (South Korea) ) Kim, H.-D. ( Samsung Electronics Co., Ltd. (South Korea) ) Chung, D.-H. ( Samsung Electronics Co., Ltd. (South Korea) ) Woo, S.-G. ( Samsung Electronics Co., Ltd. (South Korea) ) Cho, H.-K. ( Samsung Electronics Co., Ltd. (South Korea) ) Han, W.-S. ( Samsung Electronics Co., Ltd. (South Korea) ) - 掲載資料名:
- Photomask and Next-Generation Lithography Mask Technology X
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 5130
- 発行年:
- 2003
- 開始ページ:
- 727
- 終了ページ:
- 735
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819449962 [0819449962]
- 言語:
- 英語
- 請求記号:
- P63600/5130
- 資料種別:
- 国際会議録
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9
国際会議録
Effect of line-edge roughness (LER) and line-width roughness (LWR) on sub-100-nm device performance
SPIE - The International Society of Optical Engineering |
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6
国際会議録
Successful application of angular scatterometry to process control in sub-100-nm DRAM device
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