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Modeling and correction of global CD uniformity caused by fogging and loading effects in 90-nm-node CAR process

著者名:
Park, D.-I. ( Photronics-PKL (South Korea) )
Park, E.-S. ( Photronics-PKL (South Korea) )
Lee, J.-H. ( Photronics-PKL (South Korea) )
Jeong, W.-G. ( Photronics-PKL (South Korea) )
Seo, S.-K. ( Photronics-PKL (South Korea) )
Kwon, H.-J. ( Photronics-PKL (South Korea) )
Kim, J.-M. ( Photronics-PKL (South Korea) )
Jung, S.-M. ( Photronics-PKL (South Korea) )
Choi, S.-S. ( Photronics-PKL (South Korea) )
さらに 4 件
掲載資料名:
Photomask and Next-Generation Lithography Mask Technology X
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5130
発行年:
2003
開始ページ:
78
終了ページ:
85
総ページ数:
8
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819449962 [0819449962]
言語:
英語
請求記号:
P63600/5130
資料種別:
国際会議録

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