Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronics

Heterostructures based on In-Ga-Al-N alloy system as promising media for photoelectronics and integrated optoelectronics

著者名:

Ermakov, O.N. ( Sapfir Joint Stock Co. (Russia) )
Martynov, V.N. ( Moscow Steel and Alloys Institute (Russia) )
Alexandrova, G.A. ( Sapfir Joint Stock Co. (Russia) )
Stacharny, S.A. ( Sapfir Joint Stock Co. (Russia) )
Voytiuk, A.A. ( Sapfir Joint Stock Co. (Russia) )

掲載資料名:

17th international conference on photoelectronics and night vision devices : 27-31 May 2002, Moscow, Russia

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5126

発行年:

2003

開始ページ:

232

終了ページ:

240

総ページ数:

9

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819449863 [0819449865]

言語:

英語

請求記号:

P63600/5126

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013114
シリーズID:	PA00000029
会議名:	International Conference on Photoelectronics and Night Vision Devices
回次:	2002 : 17th
会議開催地:	Moscow, Russia
会議開催年:	2002.05.27-2002.05.31

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