Blank Cover Image

Stress-induced leakage currents of silicon oxides in flash EEPROM transistor

著者名:
Kang, C.S. ( Yuhan College (South Korea) )  
掲載資料名:
Nanotechnology
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
5118
発行年:
2003
開始ページ:
620
終了ページ:
627
総ページ数:
8
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819449788 [0819449784]
言語:
英語
請求記号:
P63600/5118
資料種別:
国際会議録

類似資料:

1 国際会議録 Atomic Scale Defects Involved in Stress Induced Leakage Currents in Very Thin Oxides on Silicon

Lenahan, P.M., Kang, A.Y., Campbell, J.P.

SPIE-The International Society for Optical Engineering
7 国際会議録 Stress-induced leakage currents of CMOS ULSI devices with shallow trench isolation

Sundaresan,R., Gan,C.H., Peidous,I.V.

SPIE - The International Society for Optical Engineering
2 国際会議録 Reduction of the Leakage Current of Thin-Film Transistor on Metal-Induced Laterally Crystallized Polycrystalline Silicon

Meng, Z., Wu, C., Xiong, S., Shi, X., Kwok, H.S., Wong, M.

Electrochemical Society
8 国際会議録 Reduction of Substrate Leakage Current by Minimizing Trench-isolation- Induced Stress

Miura, H., Ishitsuka, N., Suzuki, N., Ohyu, K., Ikeda, S.

Electrochemical Society
3 国際会議録 Wear-Out and Stress-Induced Leakage Current of Ultrathin Gate Oxides

Thees, H.-J., Osburn, C.M., Shiely, J.P., Massoud, H.Z.

Electrochemical Society
9 国際会議録 Study of stress-induced leakage current in thin oxides stressed by corona charging in air: Relationship to GOI defects

Wilson, M., Lagowski, J., Savtchou, A., Marinskiy, D., Jastrzebski, L., D'Amico, J.

MRS-Materials Research Society
4 国際会議録 Constant current-stress-induced breakdown of reoxidized nitrided oxide (ONO) in flash memory devices

Cha,C.L., Chor,E.F., Gong,H., Zhang,A.Q., Chan,L.H., Xie,J.

SPIE-The International Society for Optical Engineering
10 国際会議録 Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT)

H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. …

Electrochemical Society
5 国際会議録 The Search for Cathode and Anode Traps in High-Voltage Stressed Sillicon Oxides

Chen, L., Kang, C.S., Oralkan, O., Dumin, D.J., Brown, G.A., Bellutti, P.

Electrochemical Society
11 国際会議録 A CURRENT CONDUCTION MECHANISM IN LASER RECRYSTALLIZED SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS

Lee, H-S.

North-Holland
6 国際会議録 Quantitative analysis of SlLCs(stress-induced leakage currents)based on the inelastic trap-assisted tunneling model

Kamohara,S., Okuyama,Y., Manabe,Y., Okuyama,K., Kubota,K., Park,D., Hu,C.

SPIE - The International Society for Optical Engineering
12 国際会議録 Proton-induced leakage current in CCDs

Smith, D.R., Holland, A.D., Robbins, M.S., Ambrosi, R.M., Hutchinson, I.B.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12