Effects of stress annealing on the index of refraction of SiO2 layers in MOS devices

Effects of stress annealing on the index of refraction of SiO2 layers in MOS devices

著者名:

Rzodkiewicz, W. ( Institute of Electron Technology (Poland) )
Przewlocki, H.M. ( Institute of Electron Technology (Poland) )

掲載資料名:

Lightmetry 2002: Metrology and Testing Techniques Using Light

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5064

発行年:

2003

開始ページ:

281

終了ページ:

286

総ページ数:

6

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448705 [0819448702]

言語:

英語

請求記号:

P63600/5064

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013053
シリーズID:	PA00000029
会議名:	Lightmetry
回次:	2002
会議開催地:	Warsaw, Poland
会議開催年:	2002.05.14-2002.05.16

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