Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry

Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry

著者名:

Gubiotti, T. ( Nanometrics Inc. (USA) )
Jacy, D. ( Silicon Genesis Corp. (USA) )
Hoobler, R.J. ( Nanometrics Inc. (USA) )

掲載資料名:

Process and Materials Characterization and Diagnostics in IC Manufacturing

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5041

発行年:

2003

開始ページ:

105

終了ページ:

114

総ページ数:

10

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448460 [081944846X]

言語:

英語

請求記号:

P63600/5041

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013032
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Process and Materials Characterization and Diagnostics in IC Manufacturing
回次:	2003
会議開催地:	Santa Clara, CA, USA
会議開催年:	2003.02.27-2003.02.28

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