Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures

Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures

著者名:

Kagan, M.S. ( Institute of Radio Engineering and Electronics (Russia) )

Altukhov, I.V. ( Institute of Radio Engineering and Electronics (Russia) )

Chirkova, E.G. ( Institute of Radio Engineering and Electronics (Russia) )

Korolev, K.A. ( Institute of Radio Engineering and Electronics (Russia) )

Sinis, V.P. ( Institute of Radio Engineering and Electronics (Russia) )

Troeger, R.T. ( Univ. of Delaware (USA) )

Ray, S.K. ( Univ. of Delaware (USA) )

Kolodzey, J. ( Univ. of Delaware (USA) )

さらに 3 件

掲載資料名:

10th International Symposium on Nanostructures: Physics and Technology

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5023

発行年:

2003

開始ページ:

401

終了ページ:

404

総ページ数:

4

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448248 [0819448249]

言語:

英語

請求記号:

P63600/5023

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013007
シリーズID:	PA00000029
会議名:	International Symposium on Nanostructures: Physics and Technology
回次:	2002 : 10th
会議開催地:	St. Petersburg, Russia
会議開催年:	2002.06.17-2002.06.21

類似資料:

1 国際会議録 Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors. M.S. Kagan, I. Altukhov, V. Sinis, E. Chirkova, S. Paprotskiy Electrochemical Society	7 国際会議録 Weak Localization in SiGe Quantum Wells Doped with Boron Zobl, R., Gornik, E., Altukhov, I.V., Zhdanova, N.G., Landsberg, E.G., Korolev, K.A., Kagan, M.S. Trans Tech Publications
2 国際会議録 Acceptor states in boron doped SiGe quantum wells Schmalz,K., Kagan,M.S., Altukhov,I.V., Korolev,K.A., Orlov,D.V., Sinis,V.P., Tomas,S.G., Wang,K.L., Yassievich,I.N. Trans Tech Publications	8 国際会議録 Low-Voltage Lasing of p-Ge under Uniaxial Stress Zobl, R., Gornik, E., Altukhov, I.V., Sinis, V.P., Korolev, K.A., Kagan, M.S. Trans Tech Publications
3 国際会議録 Acceptor states in boron doped SiGe quantum wells Schmalz,K., Kagan,M.S., Altukhov,I.V., Korolev,K.A., Orlov,D.V., Sinis,V.P., Tomas,S.G., Wang,K.L., Yassievich,I.N. Trans Tech Publications	9 国際会議録 Terahertz emitting devices based on intersubband transitions in SiGe quantum wells Adam, T.N., Troeger, R.T., Ray, S.K., Lehmann, U., Kolodzey, J. SPIE-The International Society for Optical Engineering
4 国際会議録 Resonance acceptor states and THz generation in uniaxially strained p-Ge Altukhov,I.V., Chirkova,E.G., Kagan,M.S., Korolev,K.A., Sinis,V.P., Schmalz,K., Odnoblyudov,M.A., Yassievich,I.N. Trans Tech Publications	10 国際会議録 Resonant Acceptor States and Stimulated THz Emission in Semiconductors and Semiconductor Structures Kagan, M.S., Yassievich, I.N. Trans Tech Publications
5 国際会議録 Shallow Acceptor States iu SiGe Quantum Wells Kagan,M.S., Altukhov,I.V., Korolev,K.A., Orlov,D.V., Sinis,V.P., Thomas,S.G., Wang,K.L., Schmalz,K., Yassievich,I.N. Trans Tech Publications	11 国際会議録 The emission of Terahertz radiation from doped silicon devices Lv, Pengcheng, Kolodzey, James, Troeger, R. Thomas, Kim, Sangcheol, Ray, S. K. Materials Research Society
6 国際会議録 Far-infrared lasing due to intracenter optical transitions in Ge Altukhov,I.V., Chirkova,E.G., Kagan,M.S., Korolev,K.A., Sinis,V.P. SPIE-The International Society for Optical Engineering	12 国際会議録 Stimulated Emission in InGaN/GaN Quantum Wells Jursenas, S., Miasojedovas, S., Kurilcik, N., Kurilcik, G., Zukauskas, A., Yang, J., Asif Khan, M., Shur, M.S., Gaska, … Trans Tech Publications

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