The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

著者名:

Kryzhanovskaya, N.V. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Gladyshev, A.G. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Sizov, D.S. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Kovsh, A.R. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Tsatsul'nikov, A.F. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Chi, J.Y. ( Industrial Technology Research Institute (Taiwan) )

Wang, J.S. ( Industrial Technology Research Institute (Taiwan) )

Wei, L. ( Industrial Technology Research Institute (Taiwan) )

Ustinov, V.M. ( A.F. Ioffe Physico-Technical Institute (Russia) )

さらに 4 件

掲載資料名:

10th International Symposium on Nanostructures: Physics and Technology

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

5023

発行年:

2003

開始ページ:

38

終了ページ:

41

総ページ数:

4

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448248 [0819448249]

言語:

英語

請求記号:

P63600/5023

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013007
シリーズID:	PA00000029
会議名:	International Symposium on Nanostructures: Physics and Technology
回次:	2002 : 10th
会議開催地:	St. Petersburg, Russia
会議開催年:	2002.06.17-2002.06.21

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