Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates
- 著者名:
Bak-Misiuk, J. Misiuk, A. Adamczewska, J. Calamiotou, M. Kozanecki, A. Kuristyn, D. Reginski, K. Kaniewski, J. Georgakilas, A. - 掲載資料名:
- Atomistic aspects of epitaxial growth
- シリーズ名:
- NATO science series. Series 2, Mathematics, physics and chemistry
- シリーズ巻号:
- 65
- 発行年:
- 2002
- 開始ページ:
- 467
- 終了ページ:
- 476
- 総ページ数:
- 10
- 出版情報:
- Dordrecht: Kluwer Academic Publishers
- ISBN:
- 9781402006746 [1402006748]
- 言語:
- 英語
- 請求記号:
- N17050/65
- 資料種別:
- 国際会議録
類似資料:
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |
Kluwer Academic Publishers |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
11
国際会議録
Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen
Kluwer Academic Publishers |
SPIE-The International Society for Optical Engineering |