Defect creation mechanisms due to hot-carriers in 0.15 μm SIMOX MOSFETs

Defect creation mechanisms due to hot-carriers in 0.15 μm SIMOX MOSFETs

著者名:

掲載資料名:

Progress in SOI structures and devices operating at extreme conditions

シリーズ名:

NATO science series. Series 2, Mathematics, physics and chemistry

シリーズ巻号:

58

発行年:

2002

開始ページ:

263

終了ページ:

268

総ページ数:

6

出版情報:

Dordrecht: Kluwer Academic Publishers

ISBN:

9781402005756 [140200575X]

言語:

英語

請求記号:

N17050/58

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012854
シリーズID:	PA00000025
会議名:	NATO advanced research workshop on progress in SOI structures and devices operating at extreme conditions
回次:	2000
会議開催地:	Kyiv, Ukraine
会議開催年:	2000.10.15-2000.10.20

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