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Defect creation mechanisms due to hot-carriers in 0.15 μm SIMOX MOSFETs

著者名:
掲載資料名:
Progress in SOI structures and devices operating at extreme conditions
シリーズ名:
NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号:
58
発行年:
2002
開始ページ:
263
終了ページ:
268
総ページ数:
6
出版情報:
Dordrecht: Kluwer Academic Publishers
ISBN:
9781402005756 [140200575X]
言語:
英語
請求記号:
N17050/58
資料種別:
国際会議録

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