Comparison of LDD and double-gate MOSFET for nanoscale devices
- 著者名:
- Ko, S.-W. ( Kunsan National Univ. (South Korea) )
- Kim, J.-H.
- Jung, H.-K.
- 掲載資料名:
- Smart structures, devices, and systems : 16-18 December 2002 Melbourne, Australia
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4935
- 発行年:
- 2002
- 開始ページ:
- 316
- 終了ページ:
- 324
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819447302 [0819447307]
- 言語:
- 英語
- 請求記号:
- P63600/4935
- 資料種別:
- 国際会議録
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12
国際会議録
The Effects of the LDD Process on Short-Channel Effects in Nanoscale Charge Trapping Devices
Materiaeditors, Tingkai Li ... [et al.] ls Research Society |