Blank Cover Image

Strained p-type InGaAs/AlGaAs multipe quantum well infrared photodetectors

著者名:
Zhang, D.H. ( Nanyang Technological Univ. (Singapore) )
Sun, L.
Shi, W.
Yoon, S.F.
Li, N. ( Shanghai Institute of Technical Physics (China) )
Yuan, Z.
Chu, J.H.
さらに 2 件
掲載資料名:
Advanced materials and devices for sensing and imaging : 17-18 October 2002, Shanghai, China
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
4919
発行年:
2002
開始ページ:
321
終了ページ:
327
総ページ数:
7
出版情報:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819447081 [0819447080]
言語:
英語
請求記号:
P63600/4919
資料種別:
国際会議録

類似資料:

1 国際会議録 High-resolution X-ray diffraction analysis of p-type strained InGaAs/AlGaAs multiple quantum well structures

Shi, W., Zhang, D. H., Osotchan, T., Zhang, P. H., Yoon, S. F., Swaminathan, S.

MRS-Materials Research Society
7 国際会議録 Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by rapid thermal annealing and proton implantation

Li,N., Liu,X., Lu,W., Yuan,X.Z., Shen,S.C., Tan,H.H., Fu,L., Jagadish,C.

SPIE-The International Society for Optical Engineering
2 国際会議録 A New Compressively Strained InGaAs/AlGaAs p-Type Quantum Well Infrared Photodetector with Ultralow Dark Current and Detective Peaks in the LWIR and MWIR Bands

Chu, J., Li, Sheng S., Wang, Y.H., Ho, P.

Electrochemical Society
8 国際会議録 Dual-wavelength response in double-barrier quantum well infrared photodetectors

Osotchan,T., Zhang,D.H., Shi,W.

SPIE - The International Society for Optical Engineering
3 国際会議録 A Normal Incidence Two-Color P-Type Compressive Strained-Layer InGaAs/GaAs Quantum Well Infrared Photodetector

Wang, Y.H., Chu, J., Li, Sheng S., Ho, Pin

Electrochemical Society
9 国際会議録 Noise Performance of p-Type Strained Layer Quantum Well Infrared Photodetectors

Wang, D.C., Bosman, O., Chu, J., Li, Sheng S.

Electrochemical Society
4 国際会議録 Characterization of GalnAsP/InP multiple quantum wells grown by solid source MBE for long- wavelength infrared detection

Zhang, D.H., Sun, L., Yoon, S.F., Kam, C.H., Fan, W.J., Mei, T.

SPIE-The International Society for Optical Engineering
10 国際会議録 Photoluminescence characterization in GaAs/AlGaAs quantum well infrared photodetectors

Cai,W.Y., Li,Z.-F., Li,N., Lu,W., Zhou,J.M., Huang,Q.

SPIE-The International Society for Optical Engineering
5 国際会議録 Normal Incidence P-Type InGaAs/InGaAlAs Strained Quantum Well Infrared Photodetector

Lee, C., Zhou, W., Choi, K.K., Chang, W., Eastman, L.F., Sauer, N., Chang, T.Y.

Electrochemical Society
11 国際会議録 Comparison of n- and p-Type InGaAs/InP Quantum Well Infrared Photodetectors

Sengupta, D. K., Malin, J. I., Jackson, S. L., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., …

MRS - Materials Research Society
6 国際会議録 InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for tong-wavelength infrared detection

Zhang,D.H., Zhang,W.M., Zhang,P.H., Osotchan,T., Yoon,S.F., Shi,X., Liu,R., Wee,T.S.

SPIE - The International Society for Optical Engineering
12 国際会議録 Broadband quantum well infrared photodetectors

Li,S.S., Chu,J.T., Chiang,J.C., Lee,J.H., Singh,A.

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12