Characterization of 1.3-μm wavelength GalnNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure (Invited Paper)

Characterization of 1.3-μm wavelength GalnNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure (Invited Paper)

著者名:

Adams, A.R. ( Univ. of Surrey (UK) )

Fehse, R.

Tomic, S.

O'Reilly, E.P. ( Univ. College Cork (Ireland) )

Andreev, A.D. ( Univ. of Surrey (UK) )

Knowles, G.

Sale, T.E.

Sweeney, S.J.

Steinle, G. ( Infineon Technologies AG (Germany) )

Ramakrishnan, A.

Riechert, H.

さらに 6 件

掲載資料名:

Materials and devices for optical and wireless communications : APOC 2002 : Asia-Pacific Optical and Wireless Communications : 15-18 October, 2002, Shanghai, China

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4905

発行年:

2002

開始ページ:

183

終了ページ:

197

総ページ数:

15

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819446947 [0819446947]

言語:

英語

請求記号:

P63600/4905

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012754
シリーズID:	PA00000029
会議名:	APOC : Asia Communications and Photonics
回次:	2002
会議開催地:	Shanghai, China
会議開催年:	2002.10.15-2002.10.18

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