PSM defect printability of extremely low-k1 sub-130-nm KrF lithography

PSM defect printability of extremely low-k1 sub-130-nm KrF lithography

著者名:

Cho, W.-I. ( Samsung Electronics Co., Ltd. (South Korea) )
Yeo, G.
Moon, S.-Y.
Yoon, H.-S.
Sohn, J.-M.

掲載資料名:

22nd Annual BACUS Symposium on Photomask Technology

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4889

発行年:

2002

巻:

Part Two

開始ページ:

1202

終了ページ:

1208

総ページ数:

7

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819446756 [0819446750]

言語:

英語

請求記号:

P63600/4889

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012737
シリーズID:	PA00000029
会議名:	Annual BACUS Symposium on Photomask Technology
回次:	22nd
会議開催地:	Monterey, California, USA
会議開催年:	2002.10.01-2002.10.04

類似資料:

1 国際会議録 KrF lithography for 130 nm Finders,J., Schoot,J.B.van, Vanoppen,P., Dusa,M.V., Socha,R.J., Vandenberghe,G., Ronse,K. SPIE - The International Society for Optical Engineering	7 国際会議録 RuMBa: a rule-model OPC for low MEEF 130-nm KrF lithography Hsu,S., Shi,X., Hsu,M., Corcoran,N.P., Chen,J.F., Desai,S., Sherrill,M.J., Tseng,Y.C., Chang,H.A., Kao,J.F., Tseng,A., … SPIE-The International Society for Optical Engineering
2 国際会議録 Alternating PSM phase defect printability for 100-nm KrF lithography Kim,J., Mo,W.-P., Gordon,R.L., Williams,A. SPIE - The International Society for Optical Engineering	8 国際会議録 Emergence of assist feature OPC era in sub-130-nm DRAM devices Kim,B., Kim,I., Yeo,G., Lee,J., Choi,J., Cho,H., Moon,J. SPIE-The International Society for Optical Engineering
3 国際会議録 Adaptability and validity of thin organic bottom anti-reflective coating (BARC) to sub-90-nm patterning in ArF lithography Kim, S.-H., Lee, S.-H., Yeo, G.-S., Lee, J.H., Cho, H.-K., Han, W.-S., Moon, J.-T. SPIE-The International Society for Optical Engineering	9 国際会議録 Feasibility of very low k1(=0.31) KrF lithography Kim,I.-S., Kim,B.-S., Lee,J.-H., Cho,H.-K., Moon,J.-T. SPIE-The International Society for Optical Engineering
4 国際会議録 KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process Kim,J., Kim,S.-C., Kim,H.-C., Lee,S.-I., Choi,Y.-K., Ham,Y.-M., Han,O. SPIE-The International Society for Optical Engineering	10 国際会議録 Phase defect printability analysis for chromeless phase lithography technology Huh, S., Park, J.H., Chung, D.-H., Kim, C.-H., Shin, I.-K., Choi, S.-W., Sohn, J.-M. SPIE-The International Society for Optical Engineering
5 国際会議録 Attainable road to the lower-k1 extension using high-transmittance attenuated phase-shifting mask in the KrF lithography world Kim, I.-S., Jung, S.-G., Kim, H.-D., Yeo, G.-S., Shin, I.-K., Lee, J.-H., Cho, H.-K., Moon, J.-T. SPIE-The International Society for Optical Engineering	11 国際会議録 Identification of defect source to control reticle defect density for CAR and dry etching in the photomask process Cho, S.-Y., Ahn, W.-S., Cho, W.-I., Sung, M.-G., Moon, S.-Y., Choi, S.-W., Yoon, H.-S., Sohn, J.-M. SPIE-The International Society for Optical Engineering
6 国際会議録 Lithography process design for 4-Gb DRAM of 0.31 k1 with KrF Park,J., Yeo,G., Kim,I., Kim,B.-S., Lee,J., Cho,H., Moon,J.T. SPIE-The International Society for Optical Engineering	12 国際会議録 Realization of sub-80-nm small-space patterning in ArF photolithography Kim, S.-H., Kim, H.-D., Lee, S.-H., Park, C.-M., Ryoo, M.-H., Yeo, G.-S., Lee, J.-H., Cho, H.-K., Han, W.-S., Moon, … SPIE - The International Society of Optical Engineering

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