Optimum PEC conditions under resist heating effect reduction for 90-nm-node mask writing

Optimum PEC conditions under resist heating effect reduction for 90-nm-node mask writing

著者名:

Park, E.S. ( Photronics-PKL (South Korea) )

掲載資料名:

22nd Annual BACUS Symposium on Photomask Technology

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4889

発行年:

2002

巻:

Part Two

開始ページ:

792

終了ページ:

799

総ページ数:

8

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819446756 [0819446750]

言語:

英語

請求記号:

P63600/4889

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012737
シリーズID:	PA00000029
会議名:	Annual BACUS Symposium on Photomask Technology
回次:	22nd
会議開催地:	Monterey, California, USA
会議開催年:	2002.10.01-2002.10.04

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