Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates
- 著者名:
- Suh, S.-H. ( korea Institute of Science and Technology (South Korea) )
- Kim, J.-S.
- Seo, D.-W.
- Hahn, S.-R. ( Univ. of Illinois/Chicago (USA) )
- Sivananthan, S.
- 掲載資料名:
- Materials for infrared detectors II : 8-9 July 2002 ,Seattle, Washington, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4795
- 発行年:
- 2002
- 開始ページ:
- 1
- 終了ページ:
- 7
- 総ページ数:
- 7
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819445629 [0819445622]
- 言語:
- 英語
- 請求記号:
- P63600/4795
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
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SPIE-The International Society for Optical Engineering |
9
国際会議録
"Electrical properties of ZnS, CdTe/HgCdTe interfaces evaporated from effusion cell in UHV chamber"
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
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