Application of high-power laser technology to wide-bandgap nitride semiconductor processing (Invited Paper)

Application of high-power laser technology to wide-bandgap nitride semiconductor processing (Invited Paper)

著者名:

Eliseev, P.G. ( CHTM/Univ. of New Mexico (USA) )

Ionin, A.A. ( P.N. Lebedev Physical Institute (Russia) )

Klimachev, Y.M.

Sinitsyn, D.V.

Lee, J. ( CHTM/Univ. of New Mexico (USA) )

Osinski, M.

さらに 1 件

掲載資料名:

High-Power Laser Ablation IV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4760

発行年:

2002

巻:

Part One

開始ページ:

143

終了ページ:

155

総ページ数:

13

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445247 [081944524X]

言語:

英語

請求記号:

P63600/4760

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012597
シリーズID:	PA00000029
会議名:	International Symposium on High-Power Laser Ablation
回次:	2002 : 4th
会議開催地:	Taos, NM, USA
会議開催年:	2002.04.22-2002.04.26

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