Feasibility study of TaSiOx-type Att-PSM for 157-nm lithography
- 著者名:
Watanabe, K. ( Semiconductor Leading Edge Technologies, Inc. (Japan) ) Yamabe, O. Kanda, N. Kim, J. Uchida, N. Irie, S. Suganaga, T. Itani, T. - 掲載資料名:
- Photomask and Next-Generation Lithography Mask Technology IX
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4754
- 発行年:
- 2002
- 開始ページ:
- 444
- 終了ページ:
- 451
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819445179 [0819445177]
- 言語:
- 英語
- 請求記号:
- P63600/4754
- 資料種別:
- 国際会議録
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Impact of attenuated phase-shifting mask for 157-nm lithography with high numerical aperture lens
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Sub-70-nm pattern fabrication using an alternating phase-shifting mask in 157-nm lithography
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SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society of Optical Engineering |