A Low Temperature Technology on the Base of Hydrogen Enhanced Thermal Donor Formation for Future High-Voltage Applications

A Low Temperature Technology on the Base of Hydrogen Enhanced Thermal Donor Formation for Future High-Voltage Applications

著者名:

Job, R.

Ulyashin, A.G.

Fahrner, W.R.

Niedernostheide, F.J.

掲載資料名:

Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4746

発行年:

2002

巻:

VOL-1

開始ページ:

405

終了ページ:

413

総ページ数:

9

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445001 [0819445002]

言語:

英語

請求記号:

P63600/4746

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012582
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices
回次:	2001 : 11th
会議開催地:	Delhi, India
会議開催年:	2001.12.11-2001.12.15

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4 国際会議録 THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON Simoen, E., Claeys, C., Job, R., Ulyashin, A.G., Fahrner, W.R., Tonelli, G., Degryse, O., Clauws, P. Electrochemical Society	10 国際会議録 Hydrogen-plasma-enhanced thermal donor formation in n-type high-resistivity MCZ silicon Simoen, E., Huang, Y. L., Claeys, C., Raft, J. M., Job, R., Fahrner, W. R., Versluys, J., Clauws, P. Electrochemical Society
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