RF Output Power Analysis of 4H-SiC MESFETs Using a Novel Large Signal Time Domain Simulation Technique

RF Output Power Analysis of 4H-SiC MESFETs Using a Novel Large Signal Time Domain Simulation Technique

著者名:

掲載資料名:

Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4746

発行年:

2002

巻:

VOL-1

開始ページ:

400

終了ページ:

404

総ページ数:

5

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445001 [0819445002]

言語:

英語

請求記号:

P63600/4746

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00012582
シリーズID:	PA00000029
会議名:	International Workshop on the Physics of Semiconductor Devices
回次:	2001 : 11th
会議開催地:	Delhi, India
会議開催年:	2001.12.11-2001.12.15

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