Novel surface silylation process for chemically amplified photoresist
- 著者名:
- Lee, S.-H. ( Samsung Electronics Co., Ltd. (Korea) )
- Hong, J.
- Woo, S.-G.
- Cho, H.-G.
- Han, W,-S.
- 掲載資料名:
- Advances in Resist Technology and Processing XIX
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4690
- 発行年:
- 2002
- 巻:
- Part Two
- 開始ページ:
- 1005
- 終了ページ:
- 1012
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819444363 [0819444367]
- 言語:
- 英語
- 請求記号:
- P63600/4690
- 資料種別:
- 国際会議録
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国際会議録
Resolution improvement of chemical-amplification resist using process-induced effect correction
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Evaluation of puddle time effect and optimization of development process in 193-nm lithography
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Modification of development parameters of 193-nm chemically amplified resist with pattern density
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